Cindezela-Pack IGBT
Cindezela-pack IGBT (IEGT)
| UHLOBO | VI-DRM V | VI-RRM V | IT(AV)@80℃ A | ITGQM@CS A / µF | I-ITSM@10ms kA | VTM V | VTO V | rT mΩ | TVJM ℃ | Rthjc ℃/W | |
| I-CSG07E1400 | 1400 | 100 | 250 | 700 | 2 | 4 | ≤2.2 | ≤1.20 | ≤0.50 | 125 | 0.075 |
| I-CSG07E1700 | 1700 | 16 | 240 | 700 | 1.5 | 4 | ≤2.5 | ≤1.20 | ≤0.50 | 125 | 0.075 |
| I-CSG15F2500 | 2500 | 17 | 570 | 1500 | 3 | 10 | ≤2.8 | ≤1.50 | ≤0.90 | 125 | 0.027 |
| I-CSG20H2500 | 2500 | 17 | 830 | 2000 | 6 | 16 | ≤2.8 | ≤1.66 | ≤0.57 | 125 | 0.017 |
| CSG25H2500 | 2500 | 16 | 867 | 2500 | 6 | 18 | ≤3.1 | ≤1.66 | ≤0.57 | 125 | 0.017 |
| I-CSG30J2500 | 2500 | 17 | 1350 | 3000 | 5 | 30 | ≤2.5 | ≤1.50 | ≤0.33 | 125 | 0.012 |
| I-CSG10F2500 | 2500 | 15 | 830 | 1000 | 2 | 12 | ≤2.5 | ≤1.66 | ≤0.57 | 125 | 0.017 |
| I-CSG06D4500 | 4500 | 17 | 210 | 600 | 1 | 3.1 | ≤4.0 | ≤1.90 | ≤0.50 | 125 | 0.05 |
| I-CSG10F4500 | 4500 | 16 | 320 | 1000 | 1 | 7 | ≤3.5 | 1.9 | ≤0.35 | 125 | 0.03 |
| I-CSG20H4500 | 4500 | 16 | 745 | 2000 | 2 | 16 | ≤3.2 | ≤1.8 | ≤0.85 | 125 | 0.017 |
| I-CSG30J4500 | 4500 | 16 | 870 | 3000 | 6 | 16 | ≤4.0 | ≤2.2 | ≤0.60 | 125 | 0.012 |
| I-CSG40L4500 | 4500 | 16 | 1180 | 4000 | 3 | 20 | ≤4.0 | ≤2.1 | ≤0.58 | 125 | 0.011 |
Qaphela:D- nge dingxenye ye-iode, A-ngaphandle kwengxenye ye-diode
Ngokujwayelekile, amamojula we-IGBT othintana nomthengisi asetshenziswe kugiya lokushintsha lesistimu yokudlulisa ye-DC eguquguqukayo.Iphakheji yemojuli iwukuqeda ukushisa okuhlangothini olulodwa.Umthamo wamandla wedivayisi unomkhawulo futhi awufaneleki ukuthi uxhunywe ochungechungeni, impilo engeyinhle emoyeni kasawoti, ukudlidliza okungekuhle okulwa nokushaqeka noma ukukhathala okushisayo.
Uhlobo olusha lwe-press-contact high-power press-pack idivayisi ye-IGBT ayixazululi ngokuphelele kuphela izinkinga zezikhala ze-soldering, ukukhathala okushisayo kwezinto ezithengiswayo kanye nokusebenza kahle okuphansi kokuchithwa kokushisa okuyingxenye eyodwa kodwa futhi kuqeda ukumelana nokushisa phakathi kwezingxenye ezihlukahlukene, nciphisa ubukhulu nesisindo.Futhi kuthuthukisa kakhulu ukusebenza kahle nokuthembeka kwedivayisi ye-IGBT.Ifaneleka kakhulu ukwanelisa izimfuneko zamandla aphezulu, amandla kagesi aphezulu, ezithembeke kakhulu zohlelo oluguquguqukayo lukagesi lwe-DC.
Ukushintshwa kohlobo lokuxhumana lwe-solder nge-press-pack IGBT kubalulekile.
Kusukela ngo-2010, i-Runau Electronics yachazwa kabanzi ukuze ithuthukise uhlobo olusha lwedivayisi ye-IGBT ye-press-pack futhi iphumelele ukukhiqizwa ngo-2013. Ukusebenza kwaqinisekiswa yiziqu zikazwelonke futhi impumelelo esezingeni eliphezulu yaqedwa.
Manje sesingakwazi ukukhiqiza futhi sinikeze uchungechunge lwe-press-pack IGBT yobubanzi be-IC ku-600A kuya ku-3000A kanye nobubanzi be-VCES ku-1700V kuya ku-6500V.Ithemba elimangalisayo le-IGBT ye-press-pack eyenziwe e-China ukuthi isetshenziswe e-China flexible DC transmission system ilindeleke kakhulu futhi izoba elinye itshe elisezingeni eliphezulu lemayela lomkhakha we-China power electronics ngemva kwesitimela sikagesi esinesivinini esikhulu.
Isingeniso Esifushane Semodi Ejwayelekile:
1. Imodi: Cindezela-pack IGBT CSG07E1700
●Izici zikagesi ngemuva kokupakisha nokucindezela
● Hlehlangokuhambisanakuxhunyiwei-diode yokululama ngokusheshakuphetha
● Ipharamitha:
Inani elilinganiselwe (25℃)
a.I-Collector Emitter Voltage: VGES=1700 (V)
b.I-Gate Emitter Voltage: VCES=±20(V)
c.Umqoqi Wamanje: IC=800(A)ICP=1600(A)
d.I-Collector Power Dissipation: PC=4440(W)
e.I-Working Junction Temperature: Tj=－20~125℃
f.Izinga Lokushisa Lokugcina: Tstg=－40~125℃
Qaphela: idivayisi izolimala uma ingaphezu kwenani elilinganiselwe
EzogesiCama-haracteristics, TC＝125℃，Rth (ukumelana okushisayo kweukuhlangana kuicala）akufakiwe
a.Ukuvuza Kwesango Kwamanje: IGES=±5(μA)
b.I-Collector Emitter Blocking Current ICES=250(mA)
c.I-Collector Emitter Saturation Voltage: VCE(sat)=6(V)
d.I-Gate Emitter Threshold Voltage: VGE(th)=10(V)
e.Isikhathi sokuvula: Ithani=2.5μs
f.Isikhathi sokuvala: Ukuvala=3μs
2. Imodi: Cindezela-pack IGBT CSG10F2500
●Izici zikagesi ngemuva kokupakisha nokucindezela
● Hlehlangokuhambisanakuxhunyiwei-diode yokululama ngokusheshakuphetha
● Ipharamitha:
Inani elilinganiselwe (25℃)
a.I-Collector Emitter Voltage: VGES=2500 (V)
b.I-Gate Emitter Voltage: VCES=±20(V)
c.Umqoqi Wamanje: IC=600(A)ICP=2000(A)
d.I-Collector Power Dissipation: PC=4800(W)
e.I-Working Junction Temperature: Tj=－40~125℃
f.Izinga Lokushisa Lokugcina: Tstg=－40~125℃
Qaphela: idivayisi izolimala uma ingaphezu kwenani elilinganiselwe
EzogesiCama-haracteristics, TC＝125℃，Rth (ukumelana okushisayo kweukuhlangana kuicala）akufakiwe
a.Ukuvuza Kwesango Kwamanje: IGES=±15(μA)
b.I-Collector Emitter Blocking Current ICES=25(mA)
c.I-Collector Emitter Saturation Voltage: VCE(sat)=3.2 (V)
d.I-Gate Emitter Threshold Voltage: VGE(th)=6.3(V)
e.Isikhathi sokuvula: Ithani=3.2μs
f.Isikhathi sokuvala: Ukuvala =9.8μs
g.I-Diode Forward Voltage: VF=3.2 V
h.Isikhathi Sokubuyisela Ukubuyisela I-Diode: Trr=1.0 μs
3. Imodi: Cindezela-pack IGBT CSG10F4500
●Izici zikagesi ngemuva kokupakisha nokucindezela
● Hlehlangokuhambisanakuxhunyiwei-diode yokululama ngokusheshakuphetha
● Ipharamitha:
Inani elilinganiselwe (25℃)
a.I-Collector Emitter Voltage: VGES=4500 (V)
b.I-Gate Emitter Voltage: VCES=±20(V)
c.Umqoqi Wamanje: IC=600(A)ICP=2000(A)
d.I-Collector Power Dissipation: PC=7700(W)
e.I-Working Junction Temperature: Tj=－40~125℃
f.Izinga Lokushisa Lokugcina: Tstg=－40~125℃
Qaphela: idivayisi izolimala uma ingaphezu kwenani elilinganiselwe
EzogesiCama-haracteristics, TC＝125℃，Rth (ukumelana okushisayo kweukuhlangana kuicala）akufakiwe
a.Ukuvuza Kwesango Kwamanje: IGES=±15(μA)
b.I-Collector Emitter Blocking Current ICES=50(mA)
c.I-Collector Emitter Saturation Voltage: VCE(sat)=3.9 (V)
d.I-Gate Emitter Threshold Voltage: VGE(th)=5.2 (V)
e.Isikhathi sokuvula: Ithani=5.5μs
f.Isikhathi sokuvala: Ukuvala = 5.5μs
g.I-Diode Forward Voltage: VF=3.8 V
h.Isikhathi Sokubuyisela Ukubuyisela I-Diode: Trr=2.0 μs
Qaphela:I-Press-pack IGBT iyinzuzo ekuthembekeni kwemishini yesikhathi eside, ukumelana okuphezulu ekulimaleni kanye nezici zesakhiwo sokuxhuma i-press, ilungele ukuqashwa kudivayisi yochungechunge, futhi uma iqhathaniswa ne-GTO thyristor yendabuko, i-IGBT iyindlela yokushayela i-voltage. .Ngakho-ke, kulula ukusebenza, ukuphepha okubanzi nobubanzi bokusebenza.