Cindezela-Pack IGBT

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Imininingwane Yomkhiqizo

Omaka bomkhiqizo

Cindezela-pack IGBT (IEGT)

UHLOBO VI-DRM
V
VI-RRM
V
IT(AV)@80℃
A
ITGQM@CS
A / µF
I-ITSM@10ms
kA
VTM
V
VTO
V
rT
TVJM
Rthjc
℃/W
I-CSG07E1400 1400 100 250 700 2 4 ≤2.2 ≤1.20 ≤0.50 125 0.075
I-CSG07E1700 1700 16 240 700 1.5 4 ≤2.5 ≤1.20 ≤0.50 125 0.075
I-CSG15F2500 2500 17 570 1500 3 10 ≤2.8 ≤1.50 ≤0.90 125 0.027
I-CSG20H2500 2500 17 830 2000 6 16 ≤2.8 ≤1.66 ≤0.57 125 0.017
CSG25H2500 2500 16 867 2500 6 18 ≤3.1 ≤1.66 ≤0.57 125 0.017
I-CSG30J2500 2500 17 1350 3000 5 30 ≤2.5 ≤1.50 ≤0.33 125 0.012
I-CSG10F2500 2500 15 830 1000 2 12 ≤2.5 ≤1.66 ≤0.57 125 0.017
I-CSG06D4500 4500 17 210 600 1 3.1 ≤4.0 ≤1.90 ≤0.50 125 0.05
I-CSG10F4500 4500 16 320 1000 1 7 ≤3.5 1.9 ≤0.35 125 0.03
I-CSG20H4500 4500 16 745 2000 2 16 ≤3.2 ≤1.8 ≤0.85 125 0.017
I-CSG30J4500 4500 16 870 3000 6 16 ≤4.0 ≤2.2 ≤0.60 125 0.012
I-CSG40L4500 4500 16 1180 4000 3 20 ≤4.0 ≤2.1 ≤0.58 125 0.011

 Qaphela:D- nge dingxenye ye-iode, A-ngaphandle kwengxenye ye-diode

Ngokujwayelekile, amamojula we-IGBT othintana nomthengisi asetshenziswe kugiya lokushintsha lesistimu yokudlulisa ye-DC eguquguqukayo.Iphakheji yemojuli iwukuqeda ukushisa okuhlangothini olulodwa.Umthamo wamandla wedivayisi unomkhawulo futhi awufaneleki ukuthi uxhunywe ochungechungeni, impilo engeyinhle emoyeni kasawoti, ukudlidliza okungekuhle okulwa nokushaqeka noma ukukhathala okushisayo.

Uhlobo olusha lwe-press-contact high-power press-pack idivayisi ye-IGBT ayixazululi ngokuphelele kuphela izinkinga zezikhala ze-soldering, ukukhathala okushisayo kwezinto ezithengiswayo kanye nokusebenza kahle okuphansi kokuchithwa kokushisa okuyingxenye eyodwa kodwa futhi kuqeda ukumelana nokushisa phakathi kwezingxenye ezihlukahlukene, nciphisa ubukhulu nesisindo.Futhi kuthuthukisa kakhulu ukusebenza kahle nokuthembeka kwedivayisi ye-IGBT.Ifaneleka kakhulu ukwanelisa izimfuneko zamandla aphezulu, amandla kagesi aphezulu, ezithembeke kakhulu zohlelo oluguquguqukayo lukagesi lwe-DC.

Ukushintshwa kohlobo lokuxhumana lwe-solder nge-press-pack IGBT kubalulekile.

Kusukela ngo-2010, i-Runau Electronics yachazwa kabanzi ukuze ithuthukise uhlobo olusha lwedivayisi ye-IGBT ye-press-pack futhi iphumelele ukukhiqizwa ngo-2013. Ukusebenza kwaqinisekiswa yiziqu zikazwelonke futhi impumelelo esezingeni eliphezulu yaqedwa.

Manje sesingakwazi ukukhiqiza futhi sinikeze uchungechunge lwe-press-pack IGBT yobubanzi be-IC ku-600A kuya ku-3000A kanye nobubanzi be-VCES ku-1700V kuya ku-6500V.Ithemba elimangalisayo le-IGBT ye-press-pack eyenziwe e-China ukuthi isetshenziswe e-China flexible DC transmission system ilindeleke kakhulu futhi izoba elinye itshe elisezingeni eliphezulu lemayela lomkhakha we-China power electronics ngemva kwesitimela sikagesi esinesivinini esikhulu.

 

Isingeniso Esifushane Semodi Ejwayelekile:

1. Imodi: Cindezela-pack IGBT CSG07E1700

Izici zikagesi ngemuva kokupakisha nokucindezela
● Hlehlangokuhambisanakuxhunyiwei-diode yokululama ngokusheshakuphetha

● Ipharamitha:

Inani elilinganiselwe (25℃)

a.I-Collector Emitter Voltage: VGES=1700 (V)

b.I-Gate Emitter Voltage: VCES=±20(V)

c.Umqoqi Wamanje: IC=800(A)ICP=1600(A)

d.I-Collector Power Dissipation: PC=4440(W)

e.I-Working Junction Temperature: Tj=-20~125℃

f.Izinga Lokushisa Lokugcina: Tstg=-40~125℃

Qaphela: idivayisi izolimala uma ingaphezu kwenani elilinganiselwe

EzogesiCama-haracteristics, TC=125℃,Rth (ukumelana okushisayo kweukuhlangana kuicalaakufakiwe

a.Ukuvuza Kwesango Kwamanje: IGES=±5(μA)

b.I-Collector Emitter Blocking Current ICES=250(mA)

c.I-Collector Emitter Saturation Voltage: VCE(sat)=6(V)

d.I-Gate Emitter Threshold Voltage: VGE(th)=10(V)

e.Isikhathi sokuvula: Ithani=2.5μs

f.Isikhathi sokuvala: Ukuvala=3μs

 

2. Imodi: Cindezela-pack IGBT CSG10F2500

Izici zikagesi ngemuva kokupakisha nokucindezela
● Hlehlangokuhambisanakuxhunyiwei-diode yokululama ngokusheshakuphetha

● Ipharamitha:

Inani elilinganiselwe (25℃)

a.I-Collector Emitter Voltage: VGES=2500 (V)

b.I-Gate Emitter Voltage: VCES=±20(V)

c.Umqoqi Wamanje: IC=600(A)ICP=2000(A)

d.I-Collector Power Dissipation: PC=4800(W)

e.I-Working Junction Temperature: Tj=-40~125℃

f.Izinga Lokushisa Lokugcina: Tstg=-40~125℃

Qaphela: idivayisi izolimala uma ingaphezu kwenani elilinganiselwe

EzogesiCama-haracteristics, TC=125℃,Rth (ukumelana okushisayo kweukuhlangana kuicalaakufakiwe

a.Ukuvuza Kwesango Kwamanje: IGES=±15(μA)

b.I-Collector Emitter Blocking Current ICES=25(mA)

c.I-Collector Emitter Saturation Voltage: VCE(sat)=3.2 (V)

d.I-Gate Emitter Threshold Voltage: VGE(th)=6.3(V)

e.Isikhathi sokuvula: Ithani=3.2μs

f.Isikhathi sokuvala: Ukuvala =9.8μs

g.I-Diode Forward Voltage: VF=3.2 V

h.Isikhathi Sokubuyisela Ukubuyisela I-Diode: Trr=1.0 μs

 

3. Imodi: Cindezela-pack IGBT CSG10F4500

Izici zikagesi ngemuva kokupakisha nokucindezela
● Hlehlangokuhambisanakuxhunyiwei-diode yokululama ngokusheshakuphetha

● Ipharamitha:

Inani elilinganiselwe (25℃)

a.I-Collector Emitter Voltage: VGES=4500 (V)

b.I-Gate Emitter Voltage: VCES=±20(V)

c.Umqoqi Wamanje: IC=600(A)ICP=2000(A)

d.I-Collector Power Dissipation: PC=7700(W)

e.I-Working Junction Temperature: Tj=-40~125℃

f.Izinga Lokushisa Lokugcina: Tstg=-40~125℃

Qaphela: idivayisi izolimala uma ingaphezu kwenani elilinganiselwe

EzogesiCama-haracteristics, TC=125℃,Rth (ukumelana okushisayo kweukuhlangana kuicalaakufakiwe

a.Ukuvuza Kwesango Kwamanje: IGES=±15(μA)

b.I-Collector Emitter Blocking Current ICES=50(mA)

c.I-Collector Emitter Saturation Voltage: VCE(sat)=3.9 (V)

d.I-Gate Emitter Threshold Voltage: VGE(th)=5.2 (V)

e.Isikhathi sokuvula: Ithani=5.5μs

f.Isikhathi sokuvala: Ukuvala = 5.5μs

g.I-Diode Forward Voltage: VF=3.8 V

h.Isikhathi Sokubuyisela Ukubuyisela I-Diode: Trr=2.0 μs

Qaphela:I-Press-pack IGBT iyinzuzo ekuthembekeni kwemishini yesikhathi eside, ukumelana okuphezulu ekulimaleni kanye nezici zesakhiwo sokuxhuma i-press, ilungele ukuqashwa kudivayisi yochungechunge, futhi uma iqhathaniswa ne-GTO thyristor yendabuko, i-IGBT iyindlela yokushayela i-voltage. .Ngakho-ke, kulula ukusebenza, ukuphepha okubanzi nobubanzi bokusebenza.


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