IZINGA LOKHIQIZWA LE-ZW SERIES WELDING DIODE

Izinkomba ezijwayelekile ezisetshenziswe yi-Jiangsu Yangjie Runau Semiconductor Co ekukhiqizeni i-welding diode bezingokulandelayo:

1. GB/T 4023—1997 Amadivayisi Ahlukile Wamadivayisi E-Semiconductor Neziyingi Ezihlanganisiwe Ingxenye 2: Ama-Rectifier Diode

2. I-GB/T 4937—1995 Izindlela Zokuhlola Zemishini Nesimo Sezulu Zamadivayisi Asebenza Ngama-Semiconductor

3. JB/T 2423—1999 Power Semiconductor Devices – Indlela Yokumodela

4. JB/T 4277—1996 Power Semiconductor Device Packaging

5. I-JB/T 7624—1994 Indlela Yokuhlola I-Rectifier Diode

Imodeli Nosayizi

1. Igama lemodeli: Imodeli ye-welding diode ibhekisela kumithethonqubo ye-JB/T 2423-1999, futhi incazelo yengxenye ngayinye yemodeli iboniswe kuMfanekiso 1 ngezansi:

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2. Izimpawu zezithombe kanye nokuhlonza ukuphela (okuncane).

Izimpawu zezithombe kanye nokuhlonzwa kwetheminali kuboniswa kuMfanekiso 2, umcibisholo ukhomba kutheminali ye-cathode.

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3. Ubukhulu bomumo nokufakwa

Ukuma kwe-diode eshiselwe yi-convex kanye nohlobo lwe-disc, futhi umumo ngosayizi kufanele uhlangabezane nezidingo zoMdwebo 3 kanye neThebula 1.

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Into Ubukhulu (mm)
  ZW7100 ZW12000 ZW16000/ZW18000
I-Cathode flange (Dmax) 61 76 102
I-Cathode ne-anode Mesa (D1) 44±0.2 57±0.2 68±0.2
Ubukhulu obukhulu bendandatho ye-ceramic (D2ubuningi) 55.5 71.5 90
Ukujiya okuphelele (A) 8±1 8±1 13±2
Faka imbobo yendawo Ububanzi bembobo: φ3.5±0.2mm, Ukujula kwembobo: 1.5±0.3mm

Izilinganiso nezici

1. Izinga lepharamitha

Uchungechunge lwe-reverse repetitive peak voltage (VRRM) luchazwe kuThebula 2

Ithebula 2 Izinga le-Voltage

VI-RRM(V) 200 400
Izinga 02 04

2. Nciphisa amanani

Amanani omkhawulo azohambisana neThebula 3 futhi asebenze kulo lonke ibanga lokushisa lokusebenza.

Ithebula 3 Inani Lomkhawulo

Inani Lomkhawulo

Uphawu

Iyunithi

Inani

ZW7100 ZW12000 ZW16000 ZW18000

Izinga lokushisa lekesi

Tcase

- 40 - 85

Izinga lokushisa elilinganayo lokuhlangana (ubukhulu)

T(vj)

170

Izinga lokushisa lesitoreji

Tstg

- 40-170

I-voltage ephindaphindayo ephezulu ehlehlayo (ubukhulu)

VI-RRM

V

200/400

200/400

200/400

200/400

Buyisela i-voltage ephezulu engaphindi (ubukhulu

VI-RSM

V

300/450

300/450

300/450

300/450

Dlulisela phambili isilinganiso samanje (ubukhulu)

IF (AV)

A

7100

12000

16000

18000

Ukuya phambili (okungaphindaphindi) ukukhuphuka kwamanje (ubukhulu)

II-FSM

A

55000

85000

120000

135000

I²t (ubukhulu)

I²t

kA²s

15100

36100

72000

91000

Amandla akhuphukayo

F

kN

22-24

30 - 35

45-50

52; 57

3. Izindinganiso zobuntu

Ithebula 4 Amanani aphezulu wesici

Uhlamvu nesimo Uphawu Iyunithi

Inani

ZW7100

ZW12000

ZW16000

ZW18000

Phambili i-peak voltageIFM=5000A, Tj=25℃ VFM V

1.1

1.08

1.06

1.05

Hlehlisa inani eliphakeme eliphindaphindayo lamanjeTj=25℃, Tj=170℃ II-RRM mA

50

60

60

80

Ukumelana nokushisa I-Junction-to-case Rjc ℃/W

0.01

0.006

0.004

0.004

Qaphela: ngezidingo ezikhethekile sicela uthintane

Ii-welding diodeekhiqizwe i-Jiangsu Yangjie Runau Semiconductor isetshenziswa kabanzi emshinini wokushisela wokumelana, umshini wokushisela ophakathi nendawo nophezulu ofinyelela ku-2000Hz noma ngaphezulu.Ine-ultra-low peak yamandla aphezulu, ukumelana nokushisa okuphansi kakhulu, ubuchwepheshe bokwenza ubuciko, ikhono elihle kakhulu lokushintsha kanye nokusebenza okuzinzile kubasebenzisi bomhlaba, i-welding diode evela ku-Jiangsu Yangjie Runau Semiconductor ingenye yemishini ethembeke kakhulu yamandla e-China. imikhiqizo ye-semiconductor.

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Isikhathi sokuthumela: Jun-14-2023