Izinkomba ezijwayelekile ezisetshenziswe yi-Jiangsu Yangjie Runau Semiconductor Co ekukhiqizeni i-welding diode bezingokulandelayo:
1. GB/T 4023—1997 Amadivayisi Ahlukile Wamadivayisi E-Semiconductor Neziyingi Ezihlanganisiwe Ingxenye 2: Ama-Rectifier Diode
2. I-GB/T 4937—1995 Izindlela Zokuhlola Zemishini Nesimo Sezulu Zamadivayisi Asebenza Ngama-Semiconductor
3. JB/T 2423—1999 Power Semiconductor Devices – Indlela Yokumodela
4. JB/T 4277—1996 Power Semiconductor Device Packaging
5. I-JB/T 7624—1994 Indlela Yokuhlola I-Rectifier Diode
Imodeli Nosayizi
1. Igama lemodeli: Imodeli ye-welding diode ibhekisela kumithethonqubo ye-JB/T 2423-1999, futhi incazelo yengxenye ngayinye yemodeli iboniswe kuMfanekiso 1 ngezansi:
2. Izimpawu zezithombe kanye nokuhlonza ukuphela (okuncane).
Izimpawu zezithombe kanye nokuhlonzwa kwetheminali kuboniswa kuMfanekiso 2, umcibisholo ukhomba kutheminali ye-cathode.
3. Ubukhulu bomumo nokufakwa
Ukuma kwe-diode eshiselwe yi-convex kanye nohlobo lwe-disc, futhi umumo ngosayizi kufanele uhlangabezane nezidingo zoMdwebo 3 kanye neThebula 1.
| Into | Ubukhulu (mm) | ||
| ZW7100 | ZW12000 | ZW16000/ZW18000 | |
| I-Cathode flange (Dmax) | 61 | 76 | 102 |
| I-Cathode ne-anode Mesa (D1) | 44±0.2 | 57±0.2 | 68±0.2 |
| Ubukhulu obukhulu bendandatho ye-ceramic (D2ubuningi) | 55.5 | 71.5 | 90 |
| Ukujiya okuphelele (A) | 8±1 | 8±1 | 13±2 |
| Faka imbobo yendawo | Ububanzi bembobo: φ3.5±0.2mm, Ukujula kwembobo: 1.5±0.3mm | ||
Izilinganiso nezici
1. Izinga lepharamitha
Uchungechunge lwe-reverse repetitive peak voltage (VRRM) luchazwe kuThebula 2
Ithebula 2 Izinga le-Voltage
| VI-RRM(V) | 200 | 400 |
| Izinga | 02 | 04 |
2. Nciphisa amanani
Amanani omkhawulo azohambisana neThebula 3 futhi asebenze kulo lonke ibanga lokushisa lokusebenza.
Ithebula 3 Inani Lomkhawulo
| Inani Lomkhawulo | Uphawu | Iyunithi | Inani | |||
| ZW7100 | ZW12000 | ZW16000 | ZW18000 | |||
| Izinga lokushisa lekesi | Tcase | ℃ | - 40 - 85 | |||
| Izinga lokushisa elilinganayo lokuhlangana (ubukhulu) | T(vj) | ℃ | 170 | |||
| Izinga lokushisa lesitoreji | Tstg | ℃ | - 40-170 | |||
| I-voltage ephindaphindayo ephezulu ehlehlayo (ubukhulu) | VI-RRM | V | 200/400 | 200/400 | 200/400 | 200/400 |
| Buyisela i-voltage ephezulu engaphindi (ubukhulu | VI-RSM | V | 300/450 | 300/450 | 300/450 | 300/450 |
| Dlulisela phambili isilinganiso samanje (ubukhulu) | IF (AV) | A | 7100 | 12000 | 16000 | 18000 |
| Ukuya phambili (okungaphindaphindi) ukukhuphuka kwamanje (ubukhulu) | II-FSM | A | 55000 | 85000 | 120000 | 135000 |
| I²t (ubukhulu) | I²t | kA²s | 15100 | 36100 | 72000 | 91000 |
| Amandla akhuphukayo | F | kN | 22-24 | 30 - 35 | 45-50 | 52; 57 |
3. Izindinganiso zobuntu
Ithebula 4 Amanani aphezulu wesici
| Uhlamvu nesimo | Uphawu | Iyunithi | Inani | |||
| ZW7100 | ZW12000 | ZW16000 | ZW18000 | |||
| Phambili i-peak voltageIFM=5000A, Tj=25℃ | VFM | V | 1.1 | 1.08 | 1.06 | 1.05 |
| Hlehlisa inani eliphakeme eliphindaphindayo lamanjeTj=25℃, Tj=170℃ | II-RRM | mA | 50 | 60 | 60 | 80 |
| Ukumelana nokushisa I-Junction-to-case | Rjc | ℃/W | 0.01 | 0.006 | 0.004 | 0.004 |
| Qaphela: ngezidingo ezikhethekile sicela uthintane | ||||||
Ii-welding diodeekhiqizwe i-Jiangsu Yangjie Runau Semiconductor isetshenziswa kabanzi emshinini wokushisela wokumelana, umshini wokushisela ophakathi nendawo nophezulu ofinyelela ku-2000Hz noma ngaphezulu.Ine-ultra-low peak yamandla aphezulu, ukumelana nokushisa okuphansi kakhulu, ubuchwepheshe bokwenza ubuciko, ikhono elihle kakhulu lokushintsha kanye nokusebenza okuzinzile kubasebenzisi bomhlaba, i-welding diode evela ku-Jiangsu Yangjie Runau Semiconductor ingenye yemishini ethembeke kakhulu yamandla e-China. imikhiqizo ye-semiconductor.
Isikhathi sokuthumela: Jun-14-2023