I-rectifier diode chip ekhiqizwe yi-RUNAU Electronics yethulwa ekuqaleni yizinga lokucubungula i-GE nobuchwepheshe obuthobelana nezinga lesicelo lase-USA futhi lafaneleka amaklayenti omhlaba.Ifakwe ezicini eziqinile zokumelana nokukhathala okushisayo, impilo yesevisi ende, amandla kagesi aphezulu, amandla amakhulu, ukuguquguquka okuqinile kwemvelo, njll. Yonke i-chip ihlolwa e-TJM, ukuhlola okungahleliwe akuvunyelwe neze.Ukukhetha ukungaguquguquki kwamapharamitha wama-chip kuyatholakala ukuthi kuhlinzekwe ngokuya ngesidingo sohlelo lokusebenza.
Ipharamitha:
Ububanzi mm | Ubukhulu mm | Amandla kagesi V | I-Cathode Out Dia. mm | Tjm ℃ |
17 | 1.5±0.1 | ≤2600 | 12.5 | 150 |
23.3 | 1.95±0.1 | ≤2600 | 18.5 | 150 |
23.3 | 2.15±0.1 | 4200-5500 | 16.5 | 150 |
24 | 1.5±0.1 | ≤2600 | 18.5 | 150 |
25.4 | 1.4-1.7 | ≤3500 | 19.5 | 150 |
29.72 | 1.95±0.1 | ≤2600 | 25 | 150 |
29.72 | 1.9-2.3 | 2800-5500 | 23 | 150 |
32 | 1.9±0.1 | ≤2200 | 27.5 | 150 |
32 | 2±0.1 | 2400-2600 | 26.3 | 150 |
35 | 1.8-2.1 | ≤3500 | 29 | 150 |
35 | 2.2±0.1 | 3600-5000 | 27.5 | 150 |
36 | 2.1±0.1 | ≤2200 | 31 | 150 |
38.1 | 1.9±0.1 | ≤2200 | 34 | 150 |
40 | 1.9-2.2 | ≤3500 | 33.5 | 150 |
40 | 2.2-2.5 | 3600-6500 | 31.5 | 150 |
45 | 2.3±0.1 | ≤3000 | 39.5 | 150 |
45 | 2.5±0.1 | 3600-4500 | 37.5 | 150 |
50.8 | 2.4-2.7 | ≤4000 | 43.5 | 150 |
50.8 | 2.8±0.1 | 4200-5000 | 41.5 | 150 |
55 | 2.4-2.8 | ≤4500 | 47.7 | 150 |
55 | 2.8-3.1 | 5200-6500 | 44.5 | 150 |
63.5 | 2.6-3.0 | ≤4500 | 56.5 | 150 |
63.5 | 3.0-3.3 | 5200-6500 | 54.5 | 150 |
70 | 2.9-3.1 | ≤3200 | 63.5 | 150 |
70 | 3.2±0.1 | 3400-4500 | 62 | 150 |
76 | 3.4-3.8 | ≤4500 | 68.1 | 150 |
89 | 3.9-4.3 | ≤4500 | 80 | 150 |
99 | 4.4-4.8 | ≤4500 | 89.7 | 150 |
Ukucaciswa kobuchwepheshe:
I-RUNAU Electronics inikeza amandla ama-semiconductor chips of rectifier diode kanye ne-welding diode.
1. Ukwehla kwamandla kagesi kuhulumeni
2. I-metalization yegolide izosetshenziswa ukuze kuthuthukiswe impahla yokukhipha nokushisa.
3. Imesa yokuvikela isendlalelo esikabili
Amathiphu:
1. Ukuze ihlale isebenza kangcono, i-chip izogcinwa esimweni se-nitrogen noma se-vacuum ukuze kuvinjelwe ukuguqulwa kwamandla kagesi okubangelwa i-oxidation kanye nomswakama wezingcezu ze-molybdenum.
2. Njalo gcina indawo ye-chip ihlanzekile, sicela ugqoke amagilavu futhi ungathinti i-chip ngezandla ezingenalutho.
3. Sebenza ngokucophelela ohlelweni lokusebenzisa.Ungalimazi i-resin edge ye-chip kanye nongqimba lwe-aluminium endaweni yesigxobo yesango ne-cathode.
4. Ekuhlolweni noma ekuhlanganiseni, sicela uqaphele ukuthi ukufana, ukucaba nokuphoqa kwe-clamp ukulungiswa kufanele kuhambisane namazinga acacisiwe.Ukungafani kahle kuzoholela ekucindezelweni okungalingani kanye nokulimala kwe-chip ngamandla.Uma i-clamp force eyeqile ibekwa, i-chip izolimala kalula.Uma i-clamp force ebekiwe incane kakhulu, ukuthintana okungekuhle kanye nokukhipha ukushisa kuzothinta uhlelo lokusebenza.
5. Ibhulokhi yokucindezela ethintana nendawo ye-cathode ye-chip kufanele ikhishwe
Ncoma i-Clamp Force
Usayizi we-Chips | Isincomo se-Clamp Force |
(KN)±10% | |
Φ25.4 | 4 |
Φ30 noma Φ30.48 | 10 |
Φ35 | 13 |
Φ38 noma Φ40 | 15 |
Φ50.8 | 24 |
Φ55 | 26 |
Φ60 | 28 |
Φ63.5 | 30 |
Φ70 | 32 |
Φ76 | 35 |
Φ85 | 45 |
Φ99 | 65 |