Ukulawula Isigaba Esintantayo Esikhululekile Esinamandla Aphakeme I-Thyristor

Incazelo emfushane:


Imininingwane Yomkhiqizo

Omaka bomkhiqizo

I-Phase Control Thyristor (Uhlobo Oluntantayo Lwamahhala)

Incazelo:

Ngokuthuthuka kwamandla akhulayo kanye nomthamo wemishini yokuguqula, ikakhulukazi ukudluliswa kwe-HVDC, amandla okukhipha amandla eyunithi ye-thyristor acelwa ukuthi akhuphuke ngokufanele, lokho kuzonciphisa inani lokufakwa kwe-thyristor ochungechungeni kanye nesekethe yokuxhuma okuhambisanayo.Usayizi wedivayisi nesisindo kuzoncishiswa, ukutshalwa kwezimali okuphansi, ngisho namanje ngisho ne-voltage kuzobonakala kalula, ukusebenza okuthembekile kanye nenani lezentengiselwano kuzokwenyuka kakhulu.

Ubuchwepheshe be-silicon entantayo bamahhala obusetshenziswa ukwenza amandla aphezulu we-thyristor yamanje buzokwanelisa imfuneko yohlelo lokusebenza olusezingeni eliphezulu.Futhi ngo-2019 July, i-RUNAU Electronics yayithuthukise i-5200V thyristor ene-chip engu-5” ngempumelelo futhi yanikezwa ikhasimende elifake isicelo kuphrojekthi yase-China HVDC.

Isingeniso:

1. I-chip

I-chip esezingeni eliphakeme ye-thyristor ekhiqizwe yi-RUNAU Electronics isetshenziswa ubuchwepheshe obuntantayo bamahhala.Iwubuchwepheshe obaziwa njengobuchwepheshe bakamuva nobuvuthiwe bokukhiqiza i-thyristor yamandla aphezulu wamandla aphezulu.Isetshenziswa kabanzi ngabakhiqizi abasezingeni eliphezulu kakhulu emhlabeni.

Inqubo yokusabalalisa iye yathuthukiswa ngokuminyana nobubanzi ukuze kukhuliswe ukumelana nogesi, kwehliswe ukwehla kwamandla kagesi akusimo sezwe, futhi kuthuthukiswe i-trigger nezici eziguqukayo.Iphethini entsha ye-photolithography yakhelwe ukuthuthukisa isici se-di/dt ne-dv/dt.Isakhiwo sokuxhumana se-chip sakhiwa kabusha ukuze kuvikelwe unqenqema lwe-silicon wafer kanye ne-cathode surface, ukusebenza kwe-voltage ehlehlayo kuzothuthukiswa kakhulu.

2. Encapsulation

Inzuzo yobuchwepheshe be-silicon entantayo yamahhala ukuwohloka phakathi kwe-silicon ne-molybdenum wafer kuvinjelwe kakhulu futhi ukusetshenziswa kwe-molybdenum wafer kuncishisiwe.Ngenkathi ukucaba kwe-silicon wafer kanye nebhulokhi yethusi yephakeji kudingekile kakhulu kanye nemfuneko yokufana nokumahhadla kuphezulu kunobuchwepheshe be-alloying chip.Ngokuthuthuka okuqhubekayo kanye nokuqanjwa okusha, i-RUNAU Electronic isinqobe bonke ubunzima bezobuchwepheshe nezithiyo.Ubuchwepheshe obuntantayo bamahhala, amandla aphezulu we-thyristor yamandla aphezulu nokusebenza okuthembekile kanye nesixazululo esiphumelelayo sokuhweba kwathuthukiswa futhi kwanikezwa amaklayenti.Eziningi zazo zifakwe kusilungisi esilawulekayo samandla aphezulu, isiqalisi esithambile sikagesi ophezulu, ukudluliswa kwamandla e-HVDC, ukudonsa kwesitimela, isinxephezelo samandla asebenzayo aguqukayo kanye nohlelo lokusebenzisa amandla e-pulse.

Ukucaciswa kobuchwepheshe

  1. I-thyristor elawulwa yisigaba ene-alloy type chip ekhiqizwe yi-RUNAU Electronics, uhla lwe-II-TAVkusuka ku-350A kuya ku-5580A kanye ne-VI-DRM/VI-RRMkusuka ku-3400V kuya ku-8500V.
  2. IGT, VGTnamiHamanani okuhlola aku-25℃, ngaphandle uma kushiwo ngenye indlela, wonke amanye amapharamitha amanani okuhlola ngaphansi kuka-T.jm;
  3. I2t=ngi2F SM×tw/2,tw= Ububanzi besisekelo segagasi le-Sinusoidal uhhafu wamanje.Ku-50Hz, I2t=0.005I2I-FSM(A2S);
  4. ngo 60Hz:II-FSM(8.3ms)=II-FSM(10ms)×1.066,Tj=Tj;I2t(8.3ms)=I2t(10ms)×0.943,Tj=Tjm

Ipharamitha:

UHLOBO IT(AV)
A
TC
VI-DRM/VI-RRM
V
II-TSM
@TI-VJIM&10msA
I2t
A2s
VTM
@IT&TJ=25℃
V / A
Tjm
Rjc
℃/W
Rcs
℃/W
F
KN
m
Kg
IKHODI
Amandla kagesi afinyelela ku-4200V
KP3170-** 3170 70 3400 ~ 4200 52000 1.3x107 1.40 3000 125 0.008 0.002 70 1.45 T15C
KP4310-** 4310 70 3400 ~ 4200 60000 1.8x107 1.30 3000 125 0.006 0.002 90 2.90 I-T17D
KP5580-** 5580 70 3400 ~ 4200 90000 4.0x107 1.40 5000 125 0.004 0.001 120 3.60 T18D
Amandla kagesi afinyelela ku-5200V
KP970-** 970 70 4400 ~ 5200 13500 9.1x105 2.70 2000 125 0.022 0.005 22 0.60 I-T8C
KP2080-** 2080 70 4400 ~ 5200 29200 4.2x106 1.60 2000 125 0.010 0.003 60 1.10 T13C
KP2780-** 2780 70 4400 ~ 5200 42000 8.8x106 1.70 3000 125 0.008 0.002 70 1.45 T15C
KP3910-** 3910 65 4400 ~ 5200 55000 1.5x107 1.50 3000 125 0.006 0.002 90 2.90 I-T17D
KP4750-** 4750 70 4400 ~ 5200 8700 3.7x107 1.50 5000 110 0.004 0.001 120 3.60 T18D
Amandla kagesi afinyelela ku-6600V
KP350-** 350 70 5800 ~ 6600 4500 1.0x105 2.20 500 125 0.039 0.008 10 0.33 I-T5C
KP730-** 730 70 5800 ~ 6600 11800 6.9x105 2.20 1000 125 0.022 0.005 22 0.60 I-T8C
KP1420-** 1420 70 5800 ~ 6600 22400 2.5x106 2.10 1500 125 0.010 0.003 60 1.10 T13C
KP1800-** 1800 70 5400 ~ 6600 32000 5.1x106 1.90 1600 125 0.008 0.002 70 1.45 T15C
KP2810-** 2810 70 5800 ~ 6600 45000 1.0x107 2.00 3000 125 0.006 0.002 90 2.90 I-T17D
KP4250-** 4250 70 5800 ~ 6600 71400 2.5x107 1.70 3000 110 0.004 0.001 120 3.60 T18D
Amandla kagesi afinyelela ku-7200V
KP300-** 300 70 6800~7200 3400 5.8x104 2.40 500 115 0.039 0.008 10 0.40 I-T5D
KP640-** 640 70 6800~7200 9000 4.0x105 2.30 1000 115 0.022 0.005 22 0.65 I-T8D
KP1150-** 1150 70 6800~7200 18300 1.6x106 2.40 1500 115 0.010 0.003 60 1.30 I-T13D
KP1510-** 1510 70 6800~7200 26000 3.3x106 2.00 1600 115 0.008 0.002 70 1.85 I-T15D
KP2640-** 2640 70 6800~7200 40000 8.0x106 1.50 1500 115 0.006 0.002 90 2.90 I-T17D
Amandla kagesi afinyelela ku-8500V
KP270-** 270 70 7400~8500 2900 4.2x104 2.80 500 115 0.045 0.008 10 0.40 I-T5D
KP580-** 580 70 7400~8500 6000 1.8x105 2.60 1000 115 0.022 0.005 22 0.65 I-T8D
KP1080-** 1080 70 7400~8500 11300 6.3x105 2.80 1500 115 0.010 0.003 60 1.30 I-T13D
KP1480-** 1480 70 7400~8500 17000 1.4x106 2.10 1600 115 0.009 0.002 70 1.85 I-T15D

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  • Olandelayo:

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